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| Fast Recovery Diodes (FRD) MA3D653 Silicon planar type (cathode common) Unit : mm For high-frequency rectification 9.9 0.3 4.6 0.2 I Features * Low forward rise voltage VF * Fast reverse recovery time trr * TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV * Easy-to-mount, caused by its V cut lead end 15.0 0.5 3.2 0.1 13.7 0.2 4.2 0.2 1.4 0.2 1.6 0.2 0.8 0.1 2.54 0.3 3 5.08 0.5 3.0 0.5 2.9 0.2 2.6 0.1 0.55 0.15 I Absolute Maximum Ratings Ta = 25C 1 2 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM VRSM IF(AV) IFSM Tj Tstg Rating 300 300 5 45 -40 to +150 -40 to +150 Unit V V A A C C 1 1 : Anode 2 : Cathode 3 : Anode TO-220D Package Internal Connection 2 3 Note) * : Half sine-wave; 10 ms/cycle I Electrical Characteristics Ta = 25C Parameter Repetitive peak reverse current Symbol IRRM1 IRRM2 Forward voltage (DC) Reverse recovery time* Thermal resistance VF trr Rth(j-c) Rth(j-a) Note) 1. Rated input/output frequency: 10 MHz 2. Tightening torque-max. 8 kg x cm 3. * : trr measuring circuit 50 50 Conditions VRRM = 300 V, TC = 25C VRRM = 300 V, Tj = 150C IF = 2.5 A, TC = 25C IF = 1 A, IR = 1 A Min Typ Max 20 2 0.98 50 3 63 Unit A mA V ns C/W C/W trr IF D.U.T 5.5 IR 0.1 x IR 1 MA3D653 IF V F 10 100C 25C Ta = 150C -20C 1.6 1.4 Fast Recovery Diodes (FRD) VF Ta 100 VR = 300 V 10 IR Ta 1 Forward voltage VF (V) 10-1 1.0 IF = 5 A 0.8 2.5 A 0.6 0.4 0.2 1A Reverse current IR (A) Forward current IF (A) 1.2 100 V 10 V 1 10-2 0.1 10-3 10-4 0.01 10-5 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 0 40 80 120 160 200 0.001 -40 0 40 80 120 160 200 Forward voltage VF (V) Ambient temperature Ta (C) Ambient temperature Ta (C) 10-4 IR V R 300 Ct VR 10-6 100C Terminal capacitance Ct (pF) 10-5 Ta = 150C 250 Reverse current IR (A) 200 10-7 25C 150 10-8 100 10-9 50 10-10 0 0 50 100 150 200 250 300 0 50 100 150 200 250 300 Reverse voltage VR (V) Reverse voltage VR (V) 2 |
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